Top–down fabrication of sub-nanometre semiconducting nanoribbons derived from molybdenum disulfide sheets

Xiaofei Liu, Tao Xu, Xing Wu, Zhuhua Zhang, Jin Yu, Hao Qiu, Jin-Hua Hong, Chuan-Hong Jin, Ji-Xue Li, Xin-Ran Wang, Li-Tao Sun () and Wanlin Guo ()
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Xiaofei Liu: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute of Nano Science, Nanjing University of Aeronautics and Astronautics
Tao Xu: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University
Xing Wu: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University
Zhuhua Zhang: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute of Nano Science, Nanjing University of Aeronautics and Astronautics
Jin Yu: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute of Nano Science, Nanjing University of Aeronautics and Astronautics
Hao Qiu: National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University
Jin-Hua Hong: Center for Electron Microscopy, State Key Laboratory of Silicon Materials, Zhejiang University
Chuan-Hong Jin: Center for Electron Microscopy, State Key Laboratory of Silicon Materials, Zhejiang University
Ji-Xue Li: Center for Electron Microscopy, State Key Laboratory of Silicon Materials, Zhejiang University
Xin-Ran Wang: National Laboratory of Microstructures, School of Electronic Science and Engineering, Nanjing University
Li-Tao Sun: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University
Wanlin Guo: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education and Institute of Nano Science, Nanjing University of Aeronautics and Astronautics

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract Developments in semiconductor technology are propelling the dimensions of devices down to 10 nm, but facing great challenges in manufacture at the sub-10 nm scale. Nanotechnology can fabricate nanoribbons from two-dimensional atomic crystals, such as graphene, with widths below the 10 nm threshold, but their geometries and properties have been hard to control at this scale. Here we find that robust ultrafine molybdenum-sulfide ribbons with a uniform width of 0.35 nm can be widely formed between holes created in a MoS2 sheet under electron irradiation. In situ high-resolution transmission electron microscope characterization, combined with first-principles calculations, identifies the sub-1 nm ribbon as a Mo5S4 crystal derived from MoS2, through a spontaneous phase transition. Further first-principles investigations show that the Mo5S4 ribbon has a band gap of 0.77 eV, a Young’s modulus of 300GPa and can demonstrate 9% tensile strain before fracture. The results show a novel top–down route for controllable fabrication of functional building blocks for sub-nanometre electronics.

Date: 2013
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DOI: 10.1038/ncomms2803

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