Non-volatile memory based on the ferroelectric photovoltaic effect

Rui Guo, Lu You, Yang Zhou, Zhi Shiuh Lim, Xi Zou, Lang Chen, R. Ramesh and Junling Wang ()
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Rui Guo: School of Materials Science and Engineering, Nanyang Technological University
Lu You: School of Materials Science and Engineering, Nanyang Technological University
Yang Zhou: School of Materials Science and Engineering, Nanyang Technological University
Zhi Shiuh Lim: School of Materials Science and Engineering, Nanyang Technological University
Xi Zou: School of Materials Science and Engineering, Nanyang Technological University
Lang Chen: School of Materials Science and Engineering, Nanyang Technological University
R. Ramesh: University of California
Junling Wang: School of Materials Science and Engineering, Nanyang Technological University

Nature Communications, 2013, vol. 4, issue 1, 1-5

Abstract: Abstract The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ~10 μs programming and ~10 ms erasing time. Furthermore, it can only withstand ~105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique.

Date: 2013
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DOI: 10.1038/ncomms2990

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