Coherent topological transport on the surface of Bi2Se3
Dohun Kim,
Paul Syers,
Nicholas P. Butch,
Johnpierre Paglione and
Michael S. Fuhrer ()
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Dohun Kim: Center for Nanophysics and Advanced Materials, University of Maryland
Paul Syers: Center for Nanophysics and Advanced Materials, University of Maryland
Nicholas P. Butch: Lawrence Livermore National Laboratory
Johnpierre Paglione: Center for Nanophysics and Advanced Materials, University of Maryland
Michael S. Fuhrer: Center for Nanophysics and Advanced Materials, University of Maryland
Nature Communications, 2013, vol. 4, issue 1, 1-5
Abstract:
Abstract The two-dimensional surface of the three-dimensional topological insulator is in the symplectic universality class and should exhibit perfect weak antilocalization reflected in positive weak-field magneto-resistance. Previous studies in topological insulator thin films suffer from high level of bulk n-type doping making quantitative analysis of weak antilocalization difficult. Here we measure the magneto-resistance of bulk-insulating Bi2Se3 thin films as a function of film thickness and gate-tuned carrier density. For thick samples, the magnitude of weak antilocalization indicates two decoupled (top and bottom) symplectic surfaces. On reducing thickness, we observe first a crossover to a single symplectic channel, indicating coherent coupling of top and bottom surfaces via interlayer tunnelling, and second, a complete suppression of weak antilocalization. The first crossover is governed by the ratio of phase coherence time to the inter-surface tunnelling time, and the second crossover occurs when the hybridization gap becomes comparable to the disorder strength.
Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3040
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DOI: 10.1038/ncomms3040
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