Valley spin polarization by using the extraordinary Rashba effect on silicon

Kazuyuki Sakamoto (), Tae-Hwan Kim, Takuya Kuzumaki, Beate Müller, Yuta Yamamoto, Minoru Ohtaka, Jacek R. Osiecki, Koji Miyamoto, Yasuo Takeichi, Ayumi Harasawa, Sebastian D. Stolwijk, Anke B. Schmidt, Jun Fujii, R. I. G. Uhrberg, Markus Donath, Han Woong Yeom and Tatsuki Oda
Additional contact information
Kazuyuki Sakamoto: Chiba University
Tae-Hwan Kim: Pohang University of Science and Technology
Takuya Kuzumaki: Chiba University
Beate Müller: Chiba University
Yuta Yamamoto: Chiba University
Minoru Ohtaka: Chiba University
Jacek R. Osiecki: Chemistry and Biology, Linköping University
Koji Miyamoto: Hiroshima Synchrotron Radiation Centre, Hiroshima University
Yasuo Takeichi: Institute for Solid State Physics, The University of Tokyo
Ayumi Harasawa: Institute for Solid State Physics, The University of Tokyo
Sebastian D. Stolwijk: Physikalisches Institut, Westfälische Wilhelms-Universität Münster
Anke B. Schmidt: Physikalisches Institut, Westfälische Wilhelms-Universität Münster
Jun Fujii: TASC Laboratory, IOM-CNR
R. I. G. Uhrberg: Chemistry and Biology, Linköping University
Markus Donath: Physikalisches Institut, Westfälische Wilhelms-Universität Münster
Han Woong Yeom: Pohang University of Science and Technology
Tatsuki Oda: Institute of Science and Engineering, Kanazawa University

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract The addition of the valley degree of freedom to a two-dimensional spin-polarized electronic system provides the opportunity to multiply the functionality of next-generation devices. So far, however, such devices have not been realized due to the difficulty to polarize the valleys, which is an indispensable step to activate this degree of freedom. Here we show the formation of 100% spin-polarized valleys by a simple and easy way using the Rashba effect on a system with C3 symmetry. This polarization, which is much higher than those in ordinary Rashba systems, results in the valleys acting as filters that can suppress the backscattering of spin-charge. The present system is formed on a silicon substrate, and therefore opens a new avenue towards the realization of silicon spintronic devices with high efficiency.

Date: 2013
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DOI: 10.1038/ncomms3073

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