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High transconductance organic electrochemical transistors

Dion Khodagholy, Jonathan Rivnay, Michele Sessolo, Moshe Gurfinkel, Pierre Leleux, Leslie H. Jimison, Eleni Stavrinidou, Thierry Herve, Sébastien Sanaur, Róisín M. Owens and George G. Malliaras ()
Additional contact information
Dion Khodagholy: Ecole Nationale Superieure des Mines
Jonathan Rivnay: Ecole Nationale Superieure des Mines
Michele Sessolo: Ecole Nationale Superieure des Mines
Moshe Gurfinkel: Ecole Nationale Superieure des Mines
Pierre Leleux: Ecole Nationale Superieure des Mines
Leslie H. Jimison: Ecole Nationale Superieure des Mines
Eleni Stavrinidou: Ecole Nationale Superieure des Mines
Thierry Herve: Microvitae Technologies, Pole d’Activite Y. Morandat
Sébastien Sanaur: Ecole Nationale Superieure des Mines
Róisín M. Owens: Ecole Nationale Superieure des Mines
George G. Malliaras: Ecole Nationale Superieure des Mines

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3133

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DOI: 10.1038/ncomms3133

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