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Spin injection and detection in lanthanum- and niobium-doped SrTiO3 using the Hanle technique

Wei Han, Xin Jiang, Adam Kajdos, See-Hun Yang, Susanne Stemmer and Stuart S. P. Parkin ()
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Wei Han: IBM Almaden Research Center
Xin Jiang: IBM Almaden Research Center
Adam Kajdos: University of California
See-Hun Yang: IBM Almaden Research Center
Susanne Stemmer: University of California
Stuart S. P. Parkin: IBM Almaden Research Center

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract There has been much interest in the injection and detection of spin-polarized carriers in semiconductors for the purposes of developing novel spintronic devices. Here we report the electrical injection and detection of spin-polarized carriers into Nb-doped strontium titanate single crystals and La-doped strontium titanate epitaxial thin films using MgO tunnel barriers and the three-terminal Hanle technique. Spin lifetimes of up to ~100 ps are measured at room temperature and vary little as the temperature is decreased to low temperatures. However, the mobility of the strontium titanate has a strong temperature dependence. This behaviour and the carrier doping dependence of the spin lifetime suggest that the spin lifetime is limited by spin-dependent scattering at the MgO/strontium titanate interfaces, perhaps related to the formation of doping induced Ti3+. Our results reveal a severe limitation of the three-terminal Hanle technique for measuring spin lifetimes within the interior of the subject material.

Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3134

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DOI: 10.1038/ncomms3134

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