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Strain and curvature induced evolution of electronic band structures in twisted graphene bilayer

Wei Yan, Wen-Yu He, Zhao-Dong Chu, Mengxi Liu, Lan Meng, Rui-Fen Dou, Yanfeng Zhang, Zhongfan Liu, Jia-Cai Nie and Lin He ()
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Wei Yan: Beijing Normal University
Wen-Yu He: Beijing Normal University
Zhao-Dong Chu: Beijing Normal University
Mengxi Liu: Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University
Lan Meng: Beijing Normal University
Rui-Fen Dou: Beijing Normal University
Yanfeng Zhang: Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University
Zhongfan Liu: Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University
Jia-Cai Nie: Beijing Normal University
Lin He: Beijing Normal University

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract It is well established that strain and geometry could affect the band structure of graphene monolayer dramatically. Here we study the evolution of local electronic properties of a twisted graphene bilayer induced by a strain and a high curvature, which are found to strongly affect the local band structures of the twisted graphene bilayer. The energy difference of the two low-energy van Hove singularities decreases with increasing lattice deformation and the states condensed into well-defined pseudo-Landau levels, which mimic the quantization of massive chiral fermions in a magnetic field of about 100 T, along a graphene wrinkle. The joint effect of strain and out-of-plane distortion in the graphene wrinkle also results in a valley polarization with a significant gap. These results suggest that strained graphene bilayer could be an ideal platform to realize the high-temperature zero-field quantum valley Hall effect.

Date: 2013
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DOI: 10.1038/ncomms3159

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