Hypervalent surface interactions for colloidal stability and doping of silicon nanocrystals

Lance M. Wheeler (), Nathan R. Neale, Ting Chen and Uwe R. Kortshagen ()
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Lance M. Wheeler: University of Minnesota
Nathan R. Neale: National Renewable Energy Laboratory
Ting Chen: University of Minnesota
Uwe R. Kortshagen: University of Minnesota

Nature Communications, 2013, vol. 4, issue 1, 1-10

Abstract: Abstract Colloidal semiconductor nanocrystals have attracted attention for cost-effective, solution-based deposition of quantum-confined thin films for optoelectronics. However, two significant challenges must be addressed before practical nanocrystal-based devices can be realized. The first is coping with the ligands that terminate the nanocrystal surfaces. Though ligands provide the colloidal stability needed to cast thin films from solution, these ligands dramatically hinder charge carrier transport in the resulting film. Second, after a conductive film is achieved, doping has proven difficult for further control of the optoelectronic properties of the film. Here we report the ability to confront both of these challenges by exploiting the ability of silicon to engage in hypervalent interactions with hard donor molecules. For the first time, we demonstrate the significant potential of applying the interaction to the nanocrystal surface. In this study, hypervalent interactions are shown to provide colloidal stability as well as doping of silicon nanocrystals.

Date: 2013
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DOI: 10.1038/ncomms3197

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