A chiral-based magnetic memory device without a permanent magnet

Oren Ben Dor, Shira Yochelis, Shinto P. Mathew, Ron Naaman and Yossi Paltiel ()
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Oren Ben Dor: Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem
Shira Yochelis: Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem
Shinto P. Mathew: Weizmann Institute of Science
Ron Naaman: Weizmann Institute of Science
Yossi Paltiel: Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Date: 2013
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DOI: 10.1038/ncomms3256

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