Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

P. Wadley (), V. Novák, R.P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Železný, J. Gazquez, M.A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Mašek, R. Bertacco, V. Holý, A.W. Rushforth, K.W. Edmonds, B.L. Gallagher, C.T. Foxon, J. Wunderlich and T. Jungwirth
Additional contact information
P. Wadley: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
V. Novák: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
R.P. Campion: School of Physics and Astronomy, University of Nottingham
C. Rinaldi: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
X. Martí: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
H. Reichlová: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
J. Železný: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
J. Gazquez: Institut de Cincia de Materials de Barcelona, ICMAB-CSIC
M.A. Roldan: Universidad Compluense de Madrid
M. Varela: Universidad Compluense de Madrid
D. Khalyavin: ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council
S. Langridge: ISIS, Rutherford Appleton Laboratory, Harwell Science and Innovation Campus, Science and Technology Facilities Council
D. Kriegner: Institute of Semiconductor and Solid State Physics, University Linz
F. Máca: Institute of Physics ASCR, v.v.i., Na Slovance 2
J. Mašek: Institute of Physics ASCR, v.v.i., Na Slovance 2
R. Bertacco: LNESS-Dipartimento di Fisica del Politecnico di Milano Via Anzani 42
V. Holý: Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3
A.W. Rushforth: School of Physics and Astronomy, University of Nottingham
K.W. Edmonds: School of Physics and Astronomy, University of Nottingham
B.L. Gallagher: School of Physics and Astronomy, University of Nottingham
C.T. Foxon: School of Physics and Astronomy, University of Nottingham
J. Wunderlich: Institute of Physics ASCR, v.v.i., Cukrovarnická 10
T. Jungwirth: Institute of Physics ASCR, v.v.i., Cukrovarnická 10

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III–V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperature-exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

Date: 2013
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DOI: 10.1038/ncomms3322

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