A strained organic field-effect transistor with a gate-tunable superconducting channel

Hiroshi M. Yamamoto (), Masaki Nakano, Masayuki Suda, Yoshihiro Iwasa, Masashi Kawasaki and Reizo Kato
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Hiroshi M. Yamamoto: Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science
Masaki Nakano: Institute for Materials Research, Tohoku University
Masayuki Suda: Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science
Yoshihiro Iwasa: RIKEN Center for Emergent Matter Science (CEMS)
Masashi Kawasaki: RIKEN Center for Emergent Matter Science (CEMS)
Reizo Kato: RIKEN

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract In state-of-the-art silicon devices, mobility of the carrier is enhanced by the lattice strain from the back substrate. Such an extra control of device performance is significant in realizing high-performance computing and should be valid for electric-field-induced superconducting (SC) devices, too. However, so far, the carrier density is the sole parameter for field-induced SC interfaces. Here we show an active organic SC field-effect transistor whose lattice is modulated by the strain from the substrate. The soft organic lattice allows tuning of the strain by a choice of the back substrate to make an induced SC state accessible at low temperature with a paraelectric solid gate. An active three-terminal Josephson junction device thus realized is useful both in advanced computing and in elucidating a direct connection between filling-controlled and bandwidth-controlled SC phases in correlated materials.

Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3379

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DOI: 10.1038/ncomms3379

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