A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory

Myoung-Jae Lee (), Dongsoo Lee, Seong-Ho Cho (), Ji-Hyun Hur, Sang-Moon Lee, David H Seo, Dong-Sik Kim, Moon-Seung Yang, Sunghun Lee, Euichul Hwang, Mohammad Rakib Uddin, Hojung Kim, U-In Chung, Youngsoo Park and In-Kyeong Yoo
Additional contact information
Myoung-Jae Lee: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Dongsoo Lee: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Seong-Ho Cho: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Ji-Hyun Hur: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Sang-Moon Lee: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
David H Seo: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Dong-Sik Kim: Inha Technical College
Moon-Seung Yang: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Sunghun Lee: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Euichul Hwang: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Mohammad Rakib Uddin: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Hojung Kim: Advanced Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
U-In Chung: Advanced Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
Youngsoo Park: Compound Device Lab, Samsung Advanced Institute of Technology, Samsung Electronics
In-Kyeong Yoo: Devices R&D Center, Samsung Advanced Institute of Technology, Samsung Electronics

Nature Communications, 2013, vol. 4, issue 1, 1-8

Abstract: Abstract Stackable select devices such as the oxide p-n junction diode and the Schottky diode (one-way switch) have been proposed for non-volatile unipolar resistive switching devices; however, bidirectional select devices (or two-way switch) need to be developed for bipolar resistive switching devices. Here we report on a fully stackable switching device that solves several problems including current density, temperature stability, cycling endurance and cycle distribution. We demonstrate that the threshold switching device based on As-Ge-Te-Si material significantly improves cycling endurance performance by reactive nitrogen deposition and nitrogen plasma hardening. Formation of the thin Si3N4 glass layer by the plasma treatment retards tellurium diffusion during cycling. Scalability of threshold switching devices is measured down to 30 nm scale with extremely fast switching speed of ~2 ns.

Date: 2013
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DOI: 10.1038/ncomms3629

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