Hopping transport through defect-induced localized states in molybdenum disulphide

Hao Qiu, Tao Xu, Zilu Wang, Wei Ren, Haiyan Nan, Zhenhua Ni, Qian Chen, Shijun Yuan, Feng Miao, Fengqi Song, Gen Long, Yi Shi, Litao Sun, Jinlan Wang () and Xinran Wang ()
Additional contact information
Hao Qiu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University
Tao Xu: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University
Zilu Wang: Southeast University
Wei Ren: Shanghai University, 99 Shangda Road
Haiyan Nan: Southeast University
Zhenhua Ni: Southeast University
Qian Chen: Southeast University
Shijun Yuan: Southeast University
Feng Miao: School of Physics, Nanjing University
Fengqi Song: School of Physics, Nanjing University
Gen Long: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University
Yi Shi: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University
Litao Sun: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University
Jinlan Wang: Southeast University
Xinran Wang: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, National Center of Microstructures and Quantum Manipulation, Nanjing University

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract Molybdenum disulphide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-gated devices still remains elusive as they show much lower mobility than theoretical calculations and native n-type doping. Here we report a study of transport in few-layer molybdenum disulphide, together with transmission electron microscopy and density functional theory. We provide direct evidence that sulphur vacancies exist in molybdenum disulphide, introducing localized donor states inside the bandgap. Under low carrier densities, the transport exhibits nearest-neighbour hopping at high temperatures and variable-range hopping at low temperatures, which can be well explained under Mott formalism. We suggest that the low-carrier-density transport is dominated by hopping via these localized gap states. Our study reveals the important role of short-range surface defects in tailoring the properties and device applications of molybdenum disulphide.

Date: 2013
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DOI: 10.1038/ncomms3642

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