Flexible and twistable non-volatile memory cell array with all-organic one diode–one resistor architecture

Yongsung Ji, David F. Zeigler, Dong Su Lee, Hyejung Choi, Alex K.-Y. Jen, Heung Cho Ko () and Tae-Wook Kim ()
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Yongsung Ji: Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology
David F. Zeigler: University of Washington
Dong Su Lee: Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology
Hyejung Choi: SK hynix Inc.
Alex K.-Y. Jen: University of Washington
Heung Cho Ko: School of Materials Science and Engineering, Gwangju Institute of Science and Technology
Tae-Wook Kim: Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode–one resistor architectures. Our all-organic one diode–one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode–one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode–one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Date: 2013
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DOI: 10.1038/ncomms3707

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