Spatial fluctuations in barrier height at the graphene–silicon carbide Schottky junction
S. Rajput,
M.X. Chen,
Y. Liu,
Y.Y. Li,
M. Weinert and
L. Li ()
Additional contact information
S. Rajput: University of Wisconsin
M.X. Chen: University of Wisconsin
Y. Liu: University of Wisconsin
Y.Y. Li: University of Wisconsin
M. Weinert: University of Wisconsin
L. Li: University of Wisconsin
Nature Communications, 2013, vol. 4, issue 1, 1-7
Abstract:
Abstract When graphene is interfaced with a semiconductor, a Schottky contact forms with rectifying properties. Graphene, however, is also susceptible to the formation of ripples upon making contact with another material. Here we report intrinsic ripple- and electric field-induced effects at the graphene semiconductor Schottky junction, by comparing chemical vapour-deposited graphene transferred on semiconductor surfaces of opposite polarization—the hydrogen-terminated silicon and carbon faces of hexagonal silicon carbide. Using scanning tunnelling microscopy/spectroscopy and first-principles calculations, we show the formation of a narrow Schottky dipole barrier approximately 10 Å wide, which facilitates the observed effective electric field control of the Schottky barrier height. We further find atomic-scale spatial fluctuations in the Schottky barrier that directly follow the undulation of ripples on both graphene–silicon carbide junctions. These findings reveal fundamental properties of the graphene/semiconductor Schottky junction—a key component of vertical graphene devices that offer functionalities unattainable in planar device architecture.
Date: 2013
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:4:y:2013:i:1:d:10.1038_ncomms3752
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DOI: 10.1038/ncomms3752
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