Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Akash Bhatnagar, Ayan Roy Chaudhuri, Young Heon Kim, Dietrich Hesse and Marin Alexe ()
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Akash Bhatnagar: Max Planck Institute of Microstructure Physics
Ayan Roy Chaudhuri: Institute of Electronic Materials and Devices, Leibniz University
Young Heon Kim: Korea Research Institute of Standards and Science
Dietrich Hesse: Max Planck Institute of Microstructure Physics
Marin Alexe: Max Planck Institute of Microstructure Physics

Nature Communications, 2013, vol. 4, issue 1, 1-8

Abstract: Abstract Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (Voc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, Voc as high as 50 V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.

Date: 2013
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DOI: 10.1038/ncomms3835

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