Heterovalent cation substitutional doping for quantum dot homojunction solar cells

Alexandros Stavrinadis, Arup K. Rath, F. Pelayo García de Arquer, Silke L. Diedenhofen, César Magén, Luis Martinez, David So and Gerasimos Konstantatos ()
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Alexandros Stavrinadis: ICFO-Institut de Ciències Fotòniques
Arup K. Rath: ICFO-Institut de Ciències Fotòniques
F. Pelayo García de Arquer: ICFO-Institut de Ciències Fotòniques
Silke L. Diedenhofen: ICFO-Institut de Ciències Fotòniques
César Magén: Laboratorio de Microscopías Avanzadas (LMA), Universidad de Zaragoza
Luis Martinez: ICFO-Institut de Ciències Fotòniques
David So: ICFO-Institut de Ciències Fotòniques
Gerasimos Konstantatos: ICFO-Institut de Ciències Fotòniques

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract Colloidal quantum dots have emerged as a material platform for low-cost high-performance optoelectronics. At the heart of optoelectronic devices lies the formation of a junction, which requires the intimate contact of n-type and p-type semiconductors. Doping in bulk semiconductors has been largely deployed for many decades, yet electronically active doping in quantum dots has remained a challenge and the demonstration of robust functional optoelectronic devices had thus far been elusive. Here we report an optoelectronic device, a quantum dot homojunction solar cell, based on heterovalent cation substitution. We used PbS quantum dots as a reference material, which is a p-type semiconductor, and we employed Bi-doping to transform it into an n-type semiconductor. We then combined the two layers into a homojunction device operating as a solar cell robustly under ambient air conditions with power conversion efficiency of 2.7%.

Date: 2013
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DOI: 10.1038/ncomms3981

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