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Tuning the electron transport at single donors in zinc oxide with a scanning tunnelling microscope

Hao Zheng, Alexander Weismann () and Richard Berndt
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Hao Zheng: Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel
Alexander Weismann: Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel
Richard Berndt: Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract In devices like the single-electron transistor the detailed transport properties of a nanostructure can be measured by tuning its energy levels with a gate voltage. The scanning tunnelling microscope in contrast usually lacks such a gate electrode. Here we demonstrate tuning of the levels of a donor in a scanning tunnelling microscope without a third electrode. The potential and the position of the tip are used to locally control band bending. Conductance maps in this parameter space reveal Coulomb diamonds known from three-terminal data from single-electron transistors and provide information on charging transitions, binding energies and vibrational excitations. The analogy to single-electron transistor data suggests a new way of extracting these key quantities without making any assumptions about the unknown shape of the scanning tunnelling microscope tip.

Date: 2014
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms3992

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DOI: 10.1038/ncomms3992

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