Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

Yongbo Yuan, Gaurav Giri, Alexander L. Ayzner, Arjan P. Zoombelt, Stefan C. B. Mannsfeld, Jihua Chen, Dennis Nordlund, Michael F. Toney, Jinsong Huang () and Zhenan Bao ()
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Yongbo Yuan: University of Nebraska-Lincoln
Gaurav Giri: Stanford University
Alexander L. Ayzner: Stanford University
Arjan P. Zoombelt: Stanford University
Stefan C. B. Mannsfeld: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Jihua Chen: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
Dennis Nordlund: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Michael F. Toney: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory
Jinsong Huang: University of Nebraska-Lincoln
Zhenan Bao: Stanford University

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm2 Vs−1 (25 cm2 Vs−1 on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

Date: 2014
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DOI: 10.1038/ncomms4005

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