Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Jonathan P. Mailoa (), Austin J. Akey, Christie B. Simmons, David Hutchinson, Jay Mathews, Joseph T. Sullivan, Daniel Recht, Mark T. Winkler, James S. Williams, Jeffrey M. Warrender, Peter D. Persans, Michael J. Aziz and Tonio Buonassisi ()
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Jonathan P. Mailoa: School of Engineering, Massachusetts Institute of Technology
Austin J. Akey: School of Engineering, Massachusetts Institute of Technology
Christie B. Simmons: School of Engineering, Massachusetts Institute of Technology
David Hutchinson: Applied Physics, and Astronomy, Rensselaer Polytechnic Institute
Jay Mathews: US Army ARDEC - Benét Laboratories
Joseph T. Sullivan: School of Engineering, Massachusetts Institute of Technology
Daniel Recht: Harvard School of Engineering and Applied Sciences
Mark T. Winkler: School of Engineering, Massachusetts Institute of Technology
James S. Williams: Research School of Physics and Engineering, The Australian National University
Jeffrey M. Warrender: US Army ARDEC - Benét Laboratories
Peter D. Persans: Applied Physics, and Astronomy, Rensselaer Polytechnic Institute
Michael J. Aziz: Harvard School of Engineering and Applied Sciences
Tonio Buonassisi: School of Engineering, Massachusetts Institute of Technology

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 1020 cm−3 into a single-crystal surface layer ~150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature.

Date: 2014
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DOI: 10.1038/ncomms4011

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