Stationary domain wall contribution to enhanced ferroelectric susceptibility

Ruijuan Xu, J. Karthik, Anoop R. Damodaran and Lane W. Martin ()
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Ruijuan Xu: and Materials Research Laboratory, University of Illinois
J. Karthik: and Materials Research Laboratory, University of Illinois
Anoop R. Damodaran: and Materials Research Laboratory, University of Illinois
Lane W. Martin: and Materials Research Laboratory, University of Illinois

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract In ferroelectrics, the effect of domain wall motion on properties has been widely studied, but non-motional or stationary contributions from the volume of material within the domain wall itself has received less attention. Here we report the measurement of stationary domain wall contributions to permittivity in PbZr0.2Ti0.8O3 films. Studies of (001)-, (101)- and (111)-oriented epitaxial films reveal that (111)-oriented films, in which the motional domain wall contributions are frozen out, exhibit permittivity values approximately three times larger than the intrinsic response alone. This discrepancy can only be accounted for by considering a stationary contribution from the domain wall volume of the material that is 6–78 times larger than the bulk response, and is consistent with predictions of the enhancement of susceptibilities within 90° domain walls. This work offers new insights into the microscopic origin of dielectric enhancement and provides a pathway to engineer the dielectric response of materials.

Date: 2014
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DOI: 10.1038/ncomms4120

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