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Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

Yongji Gong, Gang Shi, Zhuhua Zhang, Wu Zhou, Jeil Jung, Weilu Gao, Lulu Ma, Yang Yang, Shubin Yang, Ge You, Robert Vajtai, Qianfan Xu, Allan H. MacDonald, Boris I. Yakobson, Jun Lou, Zheng Liu () and Pulickel M. Ajayan
Additional contact information
Yongji Gong: Rice University
Gang Shi: Rice University
Zhuhua Zhang: Rice University
Wu Zhou: Oak Ridge National Lab
Jeil Jung: The University of Texas at Austin
Weilu Gao: Rice University
Lulu Ma: Rice University
Yang Yang: Rice University
Shubin Yang: Rice University
Ge You: Rice University
Robert Vajtai: Rice University
Qianfan Xu: Rice University
Allan H. MacDonald: The University of Texas at Austin
Boris I. Yakobson: Rice University
Jun Lou: Rice University
Zheng Liu: Rice University
Pulickel M. Ajayan: Rice University

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen- and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

Date: 2014
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms4193

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DOI: 10.1038/ncomms4193

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