Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

Sefaattin Tongay, Hasan Sahin, Changhyun Ko, Alex Luce, Wen Fan, Kai Liu, Jian Zhou, Ying-Sheng Huang, Ching-Hwa Ho, Jinyuan Yan, D. Frank Ogletree, Shaul Aloni, Jie Ji, Shushen Li, Jingbo Li, F. M. Peeters and Junqiao Wu ()
Additional contact information
Sefaattin Tongay: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Hasan Sahin: University of Antwerp
Changhyun Ko: University of California
Alex Luce: University of California
Wen Fan: University of California
Kai Liu: University of California
Jian Zhou: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Ying-Sheng Huang: National Taiwan University of Science and Technology
Ching-Hwa Ho: National Taiwan University of Science and Technology
Jinyuan Yan: Advanced Light Source, Lawrence Berkeley National Laboratory
D. Frank Ogletree: Molecular Foundry, Lawrence Berkeley National Laboratory
Shaul Aloni: Molecular Foundry, Lawrence Berkeley National Laboratory
Jie Ji: University of Science and Technology of China
Shushen Li: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
Jingbo Li: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
F. M. Peeters: University of Antwerp
Junqiao Wu: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract Semiconducting transition metal dichalcogenides consist of monolayers held together by weak forces where the layers are electronically and vibrationally coupled. Isolated monolayers show changes in electronic structure and lattice vibration energies, including a transition from indirect to direct bandgap. Here we present a new member of the family, rhenium disulphide (ReS2), where such variation is absent and bulk behaves as electronically and vibrationally decoupled monolayers stacked together. From bulk to monolayers, ReS2 remains direct bandgap and its Raman spectrum shows no dependence on the number of layers. Interlayer decoupling is further demonstrated by the insensitivity of the optical absorption and Raman spectrum to interlayer distance modulated by hydrostatic pressure. Theoretical calculations attribute the decoupling to Peierls distortion of the 1T structure of ReS2, which prevents ordered stacking and minimizes the interlayer overlap of wavefunctions. Such vanishing interlayer coupling enables probing of two-dimensional-like systems without the need for monolayers.

Date: 2014
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DOI: 10.1038/ncomms4252

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