Carrier localization and electronic phase separation in a doped spin-orbit-driven Mott phase in Sr3(Ir1–xRux)2O7

Chetan Dhital, Tom Hogan, Wenwen Zhou, Xiang Chen, Zhensong Ren, Mani Pokharel, Yoshinori Okada, M. Heine, Wei Tian, Z. Yamani, C. Opeil, J. S. Helton, J. W. Lynn, Ziqiang Wang, Vidya Madhavan and Stephen D. Wilson ()
Additional contact information
Chetan Dhital: Boston College, Chestnut Hill
Tom Hogan: Boston College, Chestnut Hill
Wenwen Zhou: Boston College, Chestnut Hill
Xiang Chen: Boston College, Chestnut Hill
Zhensong Ren: Boston College, Chestnut Hill
Mani Pokharel: Boston College, Chestnut Hill
Yoshinori Okada: Boston College, Chestnut Hill
M. Heine: Boston College, Chestnut Hill
Wei Tian: Oak Ridge National Laboratory
Z. Yamani: Chalk River Laboratories, Canadian Neutron Beam Centre, National Research Council, Chalk River
C. Opeil: Boston College, Chestnut Hill
J. S. Helton: NIST Center for Neutron Research, National Institute of Standards and Technology
J. W. Lynn: NIST Center for Neutron Research, National Institute of Standards and Technology
Ziqiang Wang: Boston College, Chestnut Hill
Vidya Madhavan: Boston College, Chestnut Hill
Stephen D. Wilson: Boston College, Chestnut Hill

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract Interest in many strongly spin-orbit-coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a Jeff=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems’ potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate Jeff=1/2 Mott insulator, carriers remain localized within a nanoscale phase-separated ground state. A percolative metal–insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near-degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator.

Date: 2014
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DOI: 10.1038/ncomms4377

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