Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal–insulator transition

Julia A. Mundy, Yasuyuki Hikita, Takeaki Hidaka, Takeaki Yajima, Takuya Higuchi, Harold Y. Hwang, David A. Muller and Lena F. Kourkoutis ()
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Julia A. Mundy: School of Applied and Engineering Physics, Cornell University
Yasuyuki Hikita: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park
Takeaki Hidaka: The University of Tokyo
Takeaki Yajima: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park
Takuya Higuchi: The University of Tokyo
Harold Y. Hwang: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park
David A. Muller: School of Applied and Engineering Physics, Cornell University
Lena F. Kourkoutis: School of Applied and Engineering Physics, Cornell University

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract Electronic changes at polar interfaces between transition metal oxides offer the tantalizing possibility to stabilize novel ground states yet can also cause unintended reconstructions in devices. The nature of these interfacial reconstructions should be qualitatively different for metallic and insulating films as the electrostatic boundary conditions and compensation mechanisms are distinct. Here we directly quantify with atomic-resolution the charge distribution for manganite–titanate interfaces traversing the metal–insulator transition. By measuring the concentration and valence of the cations, we find an intrinsic interfacial electronic reconstruction in the insulating films. The total charge observed for the insulating manganite films quantitatively agrees with that needed to cancel the polar catastrophe. As the manganite becomes metallic with increased hole doping, the total charge build-up and its spatial range drop substantially. Direct quantification of the intrinsic charge transfer and spatial width should lay the framework for devices harnessing these unique electronic phases.

Date: 2014
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DOI: 10.1038/ncomms4464

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