Bulk mixed ion electron conduction in amorphous gallium oxide causes memristive behaviour

Yoshitaka Aoki, Carsten Wiemann, Vitaliy Feyer, Hong-Seok Kim, Claus Michael Schneider, Han Ill-Yoo and Manfred Martin ()
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Yoshitaka Aoki: Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT
Carsten Wiemann: Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich
Vitaliy Feyer: Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich
Hong-Seok Kim: Seoul National University
Claus Michael Schneider: Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Centre Jülich
Han Ill-Yoo: Seoul National University
Manfred Martin: Institute of Physical Chemistry, RWTH Aachen University and JARA-FIT

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract In thin films of mixed ionic electronic conductors sandwiched by two ion-blocking electrodes, the homogeneous migration of ions and their polarization will modify the electronic carrier distribution across the conductor, thereby enabling homogeneous resistive switching. Here we report non-filamentary memristive switching based on the bulk oxide ion conductivity of amorphous GaOx (x~1.1) thin films. We directly observe reversible enrichment and depletion of oxygen ions at the blocking electrodes responding to the bias polarity by using photoemission and transmission electron microscopies, thus proving that oxygen ion mobility at room temperature causes memristive behaviour. The shape of the hysteresis I-V curves is tunable by the bias history, ranging from narrow counter figure-eight loops to wide hysteresis, triangle loops as found in the mathematically derived memristor model. This dynamical behaviour can be attributed to the coupled ion drift and diffusion motion and the oxygen concentration profile acting as a state function of the memristor.

Date: 2014
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DOI: 10.1038/ncomms4473

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