Non-volatile organic memory with sub-millimetre bending radius

Richard Hahnkee Kim, Hae Jin Kim, Insung Bae, Sun Kak Hwang, Dhinesh Babu Velusamy, Suk Man Cho, Kazuto Takaishi, Tsuyoshi Muto, Daisuke Hashizume, Masanobu Uchiyama, Pascal André, Fabrice Mathevet, Benoit Heinrich, Tetsuya Aoyama, Dae-Eun Kim, Hyungsuk Lee, Jean-Charles Ribierre () and Cheolmin Park ()
Additional contact information
Richard Hahnkee Kim: Yonsei University
Hae Jin Kim: School of Mechanical Engineering, Yonsei University
Insung Bae: Yonsei University
Sun Kak Hwang: Yonsei University
Dhinesh Babu Velusamy: Yonsei University
Suk Man Cho: Yonsei University
Kazuto Takaishi: Elements Chemistry Laboratory, RIKEN
Tsuyoshi Muto: Elements Chemistry Laboratory, RIKEN
Daisuke Hashizume: Materials Characterization Support Unit, RIKEN Center for Emergent Matter Science
Masanobu Uchiyama: Elements Chemistry Laboratory, RIKEN
Pascal André: Elements Chemistry Laboratory, RIKEN
Fabrice Mathevet: Institut Parisien de Chimie Moléculaire, Chimie des Polymères, Université Pierre et Marie Curie, UMR 8232
Benoit Heinrich: Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, CNRS-Université de Strasbourg
Tetsuya Aoyama: Elements Chemistry Laboratory, RIKEN
Dae-Eun Kim: School of Mechanical Engineering, Yonsei University
Jean-Charles Ribierre: Elements Chemistry Laboratory, RIKEN
Cheolmin Park: Yonsei University

Nature Communications, 2014, vol. 5, issue 1, 1-12

Abstract: Abstract High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n-type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of >6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 μm and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.

Date: 2014
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DOI: 10.1038/ncomms4583

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