Raman phonon emission in a driven double quantum dot

J.I. Colless, X.G. Croot, T.M. Stace, A.C. Doherty, S.D. Barrett, H. Lu, A.C. Gossard and D.J. Reilly ()
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J.I. Colless: ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney
X.G. Croot: ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney
T.M. Stace: ARC Centre of Excellence for Engineered Quantum Systems, School of Mathematics and Physics, University of Queensland
A.C. Doherty: ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney
S.D. Barrett: Blackett Laboratory and Institute for Mathematical Sciences, Imperial College London
H. Lu: University of California
A.C. Gossard: University of California
D.J. Reilly: ARC Centre of Excellence for Engineered Quantum Systems, School of Physics, The University of Sydney

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract The compound semiconductor gallium–arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in a strong piezoelectric interaction between lattice acoustic phonons and qubit states with an electric dipole, a potential source of decoherence during charge-sensitive operations. Here we report phonon generation in a GaAs double quantum dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analogue of the Raman effect, phonon emission produces population inversion of the two-level system and leads to rapid decoherence of the qubit when the microwave energy exceeds the level splitting. Comparing data with a theoretical model suggests that phonon emission is a sensitive function of the device geometry.

Date: 2014
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DOI: 10.1038/ncomms4716

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