Ferroelastic domain switching dynamics under electrical and mechanical excitations

Peng Gao, Jason Britson, Christopher T. Nelson, Jacob R. Jokisaari, Chen Duan, Morgan Trassin, Seung-Hyub Baek, Hua Guo, Linze Li, Yiran Wang, Ying-Hao Chu, Andrew M. Minor, Chang-Beom Eom, Ramamoorthy Ramesh, Long-Qing Chen and Xiaoqing Pan ()
Additional contact information
Peng Gao: University of Michigan
Jason Britson: Penn State University, University Park
Christopher T. Nelson: University of Michigan
Jacob R. Jokisaari: University of Michigan
Chen Duan: Penn State University, University Park
Morgan Trassin: University of California
Seung-Hyub Baek: University of Wisconsin, Madison, Wisconsin 53706, USA
Hua Guo: National Center for Electron Microscopy, Lawrence Berkeley National Laboratory
Linze Li: University of Michigan
Yiran Wang: University of Michigan
Ying-Hao Chu: University of California
Andrew M. Minor: University of California
Chang-Beom Eom: University of Wisconsin, Madison, Wisconsin 53706, USA
Ramamoorthy Ramesh: University of California
Long-Qing Chen: Penn State University, University Park
Xiaoqing Pan: University of Michigan

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Date: 2014
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DOI: 10.1038/ncomms4801

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