Electron spin resonance and spin–valley physics in a silicon double quantum dot

Xiaojie Hao (), Rusko Ruskov (), Ming Xiao, Charles Tahan and HongWen Jiang
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Xiaojie Hao: University of California at Los Angeles
Rusko Ruskov: Laboratory for Physical Sciences
Ming Xiao: University of California at Los Angeles
Charles Tahan: Laboratory for Physical Sciences
HongWen Jiang: University of California at Los Angeles

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based double quantum dot under electron spin resonance. An anticrossing of the driven dot energy levels is observed when the Zeeman and valley splittings coincide. A detected anticrossing splitting of 60 MHz is interpreted as a direct measure of spin and valley mixing, facilitated by spin–orbit interaction in the presence of non-ideal interfaces. A lower bound of spin dephasing time of 63 ns is extracted. We also describe a possible experimental evidence of an unconventional spin–valley blockade, despite the assumption of non-ideal interfaces. This understanding of silicon spin–valley physics should enable better control and read-out techniques for the spin qubits in an all CMOS silicon approach.

Date: 2014
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DOI: 10.1038/ncomms4860

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