Sub-15-nm patterning of asymmetric metal electrodes and devices by adhesion lithography

David J. Beesley, James Semple, Lethy Krishnan Jagadamma, Aram Amassian, Martyn A. McLachlan, Thomas D. Anthopoulos () and John C. deMello ()
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David J. Beesley: Imperial College London, Prince Consort Road, South Kensington
James Semple: Imperial College London, Prince Consort Road, South Kensington
Lethy Krishnan Jagadamma: Solar and Photovoltaic Engineering Research, King Abdullah University of Science and Technology (KAUST)
Aram Amassian: Solar and Photovoltaic Engineering Research, King Abdullah University of Science and Technology (KAUST)
Martyn A. McLachlan: Imperial College London, Exhibition Road, South Kensington
Thomas D. Anthopoulos: Imperial College London, Prince Consort Road, South Kensington
John C. deMello: Imperial College London, Exhibition Road, South Kensington

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Coplanar electrodes formed from asymmetric metals separated on the nanometre length scale are essential elements of nanoscale photonic and electronic devices. Existing fabrication methods typically involve electron-beam lithography—a technique that enables high fidelity patterning but suffers from significant limitations in terms of low throughput, poor scalability to large areas and restrictive choice of substrate and electrode materials. Here, we describe a versatile method for the rapid fabrication of asymmetric nanogap electrodes that exploits the ability of selected self-assembled monolayers to attach conformally to a prepatterned metal layer and thereby weaken adhesion to a subsequently deposited metal film. The method may be carried out under ambient conditions using simple equipment and a minimum of processing steps, enabling the rapid fabrication of nanogap electrodes and optoelectronic devices with aspect ratios in excess of 100,000.

Date: 2014
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DOI: 10.1038/ncomms4933

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