Mapping polarization induced surface band bending on the Rashba semiconductor BiTeI

Christopher John Butler, Hung-Hsiang Yang, Jhen-Yong Hong, Shih-Hao Hsu, Raman Sankar, Chun-I Lu, Hsin-Yu Lu, Kui-Hon Ou Yang, Hung-Wei Shiu, Chia-Hao Chen, Chao-Cheng Kaun, Guo-Jiun Shu, Fang-Cheng Chou and Minn-Tsong Lin ()
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Christopher John Butler: National Taiwan University
Hung-Hsiang Yang: National Taiwan University
Jhen-Yong Hong: National Taiwan University
Shih-Hao Hsu: National Taiwan University
Raman Sankar: Center for Condensed Matter Sciences, National Taiwan University
Chun-I Lu: National Taiwan University
Hsin-Yu Lu: National Taiwan University
Kui-Hon Ou Yang: National Taiwan University
Hung-Wei Shiu: National Synchrotron Radiation Research Center
Chia-Hao Chen: National Synchrotron Radiation Research Center
Chao-Cheng Kaun: Research Center for Applied Sciences, Academia Sinica
Guo-Jiun Shu: Center for Condensed Matter Sciences, National Taiwan University
Fang-Cheng Chou: Center for Condensed Matter Sciences, National Taiwan University
Minn-Tsong Lin: National Taiwan University

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract Surfaces of semiconductors with strong spin-orbit coupling are of great interest for use in spintronic devices exploiting the Rashba effect. BiTeI features large Rashba-type spin splitting in both valence and conduction bands. Either can be shifted towards the Fermi level by surface band bending induced by the two possible polar terminations, making Rashba spin-split electron or hole bands electronically accessible. Here we demonstrate the first real-space microscopic identification of each termination with a multi-technique experimental approach. Using spatially resolved tunnelling spectroscopy across the lateral boundary between the two terminations, a previously speculated on p-n junction-like discontinuity in electronic structure at the lateral boundary is confirmed experimentally. These findings realize an important step towards the exploitation of the unique behaviour of the Rashba semiconductor BiTeI for new device concepts in spintronics.

Date: 2014
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DOI: 10.1038/ncomms5066

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