One order of magnitude faster phase change at reduced power in Ti-Sb-Te

Min Zhu, Mengjiao Xia, Feng Rao (), Xianbin Li (), Liangcai Wu, Xinglong Ji, Shilong Lv, Zhitang Song (), Songlin Feng, Hongbo Sun and Shengbai Zhang
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Min Zhu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Mengjiao Xia: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Feng Rao: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Xianbin Li: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Liangcai Wu: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Xinglong Ji: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Shilong Lv: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Zhitang Song: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Songlin Feng: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences
Hongbo Sun: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University
Shengbai Zhang: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memory cell based on Ti0.4Sb2Te3 alloy, showing one order of magnitude faster Set operation speed and as low as one-fifth Reset operation power, compared with Ge2Sb2Te5-based phase change memory cell at the same size. The enhancements may be rooted in the common presence of titanium-centred octahedral motifs in both amorphous and crystalline Ti0.4Sb2Te3 phases. The essentially unchanged local structures around the titanium atoms may be responsible for the significantly improved performance, as these structures could act as nucleation centres to facilitate a swift, low-energy order-disorder transition for the rest of the Sb-centred octahedrons. Our study may provide an alternative to the development of high-speed, low-power dynamic random access memory-like phase change memory technology.

Date: 2014
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DOI: 10.1038/ncomms5086

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