Ferroelectric tunnel junctions for information storage and processing

Vincent Garcia () and Manuel Bibes ()
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Vincent Garcia: Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel
Manuel Bibes: Unité Mixte de Physique CNRS/Thales, 1 avenue Fresnel

Nature Communications, 2014, vol. 5, issue 1, 1-12

Abstract: Computer memory based on ferroelectric polarization is a promising alternative to technologies based, for example, on magnetism. Here, Garcia and Bibes review how ferroelectric tunnel junctions, where ferroelectric polarization controls electrical resistance, could improve the performance of these devices.

Date: 2014
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DOI: 10.1038/ncomms5289

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