Atomically precise interfaces from non-stoichiometric deposition

Y. F. Nie, Y. Zhu, C.-H. Lee, L. F. Kourkoutis, J. A. Mundy, J. Junquera, Ph. Ghosez, D. J. Baek, S. Sung, X. X. Xi, K. M. Shen, D. A. Muller and D. G. Schlom ()
Additional contact information
Y. F. Nie: Cornell University
Y. Zhu: School of Applied and Engineering Physics, Cornell University
C.-H. Lee: Cornell University
L. F. Kourkoutis: School of Applied and Engineering Physics, Cornell University
J. A. Mundy: School of Applied and Engineering Physics, Cornell University
J. Junquera: Universidad de Cantabria, Cantabria Campus Internacional, Avenida de los Castros s/n
Ph. Ghosez: Theoretical Materials Physics, Université de Liège
D. J. Baek: School of Electrical and Computer Engineering, Cornell University
S. Sung: School of Applied and Engineering Physics, Cornell University
X. X. Xi: Temple University
K. M. Shen: Laboratory of Atomic and Solid State Physics, Cornell University
D. A. Muller: School of Applied and Engineering Physics, Cornell University
D. G. Schlom: Cornell University

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth. Here we show that the most precise control is, however, obtained by using deliberate and specific non-stoichiometric growth conditions. For the precise growth of Srn+1TinOn+1 Ruddlesden–Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control—from just the n=∞ end members (perovskites) to the entire RP homologous series—enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.

Date: 2014
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DOI: 10.1038/ncomms5530

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