Thermoelectric Seebeck effect in oxide-based resistive switching memory

Ming Wang, Chong Bi, Ling Li, Shibing Long, Qi Liu, Hangbing Lv, Nianduan Lu, Pengxiao Sun and Ming Liu ()
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Ming Wang: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Chong Bi: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Ling Li: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Shibing Long: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Qi Liu: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Hangbing Lv: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Nianduan Lu: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Pengxiao Sun: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences
Ming Liu: Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract Reversible resistive switching induced by an electric field in oxide-based resistive switching memory shows a promising application in future information storage and processing. It is believed that there are some local conductive filaments formed and ruptured in the resistive switching process. However, as a fundamental question, how electron transports in the formed conductive filament is still under debate due to the difficulty to directly characterize its physical and electrical properties. Here we investigate the intrinsic electronic transport mechanism in such conductive filament by measuring thermoelectric Seebeck effects. We show that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary. Moreover, at low resistance states, we observe a clear semiconductor–metal transition around 150 K. These results provide insight in understanding resistive switching process and establish a basic framework for modelling resistive switching behaviour.

Date: 2014
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DOI: 10.1038/ncomms5598

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