Interface-induced nonswitchable domains in ferroelectric thin films

Myung-Geun Han (), Matthew S.J. Marshall, Lijun Wu, Marvin A. Schofield, Toshihiro Aoki, Ray Twesten, Jason Hoffman, Frederick J. Walker, Charles H. Ahn and Yimei Zhu ()
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Myung-Geun Han: Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Matthew S.J. Marshall: Yale University
Lijun Wu: Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Marvin A. Schofield: Condensed Matter Physics and Materials Science, Brookhaven National Laboratory
Toshihiro Aoki: JEOL USA Inc.
Ray Twesten: Gatan Inc.
Jason Hoffman: Yale University
Frederick J. Walker: Yale University
Charles H. Ahn: Yale University
Yimei Zhu: Condensed Matter Physics and Materials Science, Brookhaven National Laboratory

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Engineering domains in ferroelectric thin films is crucial for realizing technological applications including non-volatile data storage and solar energy harvesting. Size and shape of domains strongly depend on the electrical and mechanical boundary conditions. Here we report the origin of nonswitchable polarization under external bias that leads to energetically unfavourable head-to-head domain walls in as-grown epitaxial PbZr0.2Ti0.8O3 thin films. By mapping electrostatic potentials and electric fields using off-axis electron holography and electron-beam-induced current with in situ electrical biasing in a transmission electron microscope, we show that electronic band bending across film/substrate interfaces locks local polarization direction and further produces unidirectional biasing fields, inducing nonswitchable domains near the interface. Presence of oxygen vacancies near the film surface, as revealed by electron-energy loss spectroscopy, stabilizes the charged domain walls. The formation of charged domain walls and nonswitchable domains reported in this study can be an origin for imprint and retention loss in ferroelectric thin films.

Date: 2014
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DOI: 10.1038/ncomms5693

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