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An upconverted photonic nonvolatile memory

Ye Zhou, Su-Ting Han, Xian Chen, Feng Wang, Yong-Bing Tang and V.A.L. Roy ()
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Ye Zhou: City University of Hong Kong
Su-Ting Han: City University of Hong Kong
Xian Chen: City University of Hong Kong
Feng Wang: City University of Hong Kong
Yong-Bing Tang: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences
V.A.L. Roy: City University of Hong Kong

Nature Communications, 2014, vol. 5, issue 1, 1-8

Abstract: Abstract Conventional flash memory devices are voltage driven and found to be unsafe for confidential data storage. To ensure the security of the stored data, there is a strong demand for developing novel nonvolatile memory technology for data encryption. Here we show a photonic flash memory device, based on upconversion nanocrystals, which is light driven with a particular narrow width of wavelength in addition to voltage bias. With the help of near-infrared light, we successfully manipulate the multilevel data storage of the flash memory device. These upconverted photonic flash memory devices exhibit high ON/OFF ratio, long retention time and excellent rewritable characteristics.

Date: 2014
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5720

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DOI: 10.1038/ncomms5720

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