Highly efficient inverted polymer light-emitting diodes using surface modifications of ZnO layer
Bo Ram Lee,
Eui Dae Jung,
Ji Sun Park,
Yun Seok Nam,
Sa Hoon Min,
Byeong-Su Kim,
Kyung-Min Lee,
Jong-Ryul Jeong,
Richard H. Friend,
Ji-Seon Kim,
Sang Ouk Kim and
Myoung Hoon Song ()
Additional contact information
Bo Ram Lee: School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST)
Eui Dae Jung: School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST)
Ji Sun Park: Energy Nano Materials Research Center, Korea Electronics Technology Institute (KETI)
Yun Seok Nam: School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST)
Sa Hoon Min: Ulsan National Institute of Science and Technology (UNIST)
Byeong-Su Kim: Ulsan National Institute of Science and Technology (UNIST)
Kyung-Min Lee: Graduate School of Green Energy Technology, Chungnam National University
Jong-Ryul Jeong: Graduate School of Green Energy Technology, Chungnam National University
Richard H. Friend: Cavendish Laboratory
Ji-Seon Kim: Imperial College London
Sang Ouk Kim: Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), KAIST
Myoung Hoon Song: School of Materials Science and Engineering and KIST-UNIST Ulsan Center for Convergent Materials, Ulsan National Institute of Science and Technology (UNIST)
Nature Communications, 2014, vol. 5, issue 1, 1-8
Abstract:
Abstract Organic light-emitting diodes have been recently focused for flexible display and solid-state lighting applications and so much effort has been devoted to achieve highly efficient organic light-emitting diodes. Here, we improve the efficiency of inverted polymer light-emitting diodes by introducing a spontaneously formed ripple-shaped nanostructure of ZnO and applying an amine-based polar solvent treatment to the nanostructure of ZnO. The nanostructure of the ZnO layer improves the extraction of the waveguide modes inside the device structure, and a 2-ME+EA interlayer enhances the electron injection and hole blocking in addition to reducing exciton quenching between the polar-solvent-treated ZnO and the emissive layer. Therefore, our optimized inverted polymer light-emitting diodes have a luminous efficiency of 61.6 cd A−1 and an external quantum efficiency of 17.8%, which are the highest efficiency values among polymer-based fluorescent light-emitting diodes that contain a single emissive layer.
Date: 2014
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5840
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DOI: 10.1038/ncomms5840
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