Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide

Amin Azizi, Xiaolong Zou, Peter Ercius, Zhuhua Zhang, Ana Laura Elías, Néstor Perea-López, Greg Stone, Mauricio Terrones, Boris I. Yakobson () and Nasim Alem ()
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Amin Azizi: Materials Research Institute, Pennsylvania State University
Xiaolong Zou: and the Richard Smalley Institute, Rice University
Peter Ercius: National Center for Electron Microscopy, Lawrence Berkeley National Laboratory
Zhuhua Zhang: and the Richard Smalley Institute, Rice University
Ana Laura Elías: Center for Two Dimensional and Layered Materials, Pennsylvania State University
Néstor Perea-López: Center for Two Dimensional and Layered Materials, Pennsylvania State University
Greg Stone: Materials Research Institute, Pennsylvania State University
Mauricio Terrones: Materials Research Institute, Pennsylvania State University
Boris I. Yakobson: and the Richard Smalley Institute, Rice University
Nasim Alem: Materials Research Institute, Pennsylvania State University

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract Dislocations have a significant effect on mechanical, electronic, magnetic and optical properties of crystals. For a dislocation to migrate in bulk crystals, collective and simultaneous movement of several atoms is needed. In two-dimensional crystals, in contrast, dislocations occur on the surface and can exhibit unique migration dynamics. Dislocation migration has recently been studied in graphene, but no studies have been reported on dislocation dynamics for two-dimensional transition metal dichalcogenides with unique metal-ligand bonding and a three-atom thickness. This study presents dislocation motion, glide and climb, leading to grain boundary migration in a tungsten disulphide monolayer. Direct atomic-scale imaging coupled with atomistic simulations reveals a strikingly low-energy barrier for glide, leading to significant grain boundary reconstruction in tungsten disulphide. The observed dynamics are unique and different from those reported for graphene. Through strain field mapping, we also demonstrate how dislocations introduce considerable strain along the grain boundaries and at the dislocation cores.

Date: 2014
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DOI: 10.1038/ncomms5867

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