Electrically tuned magnetic order and magnetoresistance in a topological insulator

Zuocheng Zhang, Xiao Feng, Minghua Guo, Kang Li, Jinsong Zhang, Yunbo Ou, Yang Feng, Lili Wang, Xi Chen, Ke He (), Xucun Ma, Qikun Xue and Yayu Wang ()
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Zuocheng Zhang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xiao Feng: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Minghua Guo: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Kang Li: Institute of Physics, Chinese Academy of Sciences
Jinsong Zhang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Yunbo Ou: Institute of Physics, Chinese Academy of Sciences
Yang Feng: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Lili Wang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xi Chen: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Ke He: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xucun Ma: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Qikun Xue: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Yayu Wang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

Date: 2014
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DOI: 10.1038/ncomms5915

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