Soft epitaxy of nanocrystal superlattices

Sara M. Rupich, Fernando C. Castro, William T. M. Irvine () and Dmitri V. Talapin ()
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Sara M. Rupich: The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, USA
Fernando C. Castro: The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, USA
William T. M. Irvine: James Franck Institute, The University of Chicago
Dmitri V. Talapin: The University of Chicago, 929 East 57th Street, Chicago, Illinois 60637, USA

Nature Communications, 2014, vol. 5, issue 1, 1-10

Abstract: Abstract Epitaxial heterostructures with precise registry between crystal layers play a key role in electronics and optoelectronics. In a close analogy, performance of nanocrystal (NC) based devices depends on the perfection of interfaces formed between NC layers. Here we systematically study the epitaxial growth of NC layers for the first time to enable the fabrication of coherent NC layers. NC epitaxy reveals an exceptional strain tolerance. It follows a universal island size scaling behaviour and shows a strain-driven transition from layer-by-layer to Stranski–Krastanov growth with non-trivial island height statistics. Kinetic bottlenecks play an important role in NC epitaxy, especially in the transition from sub-monolayer to multilayer coverage and the epitaxy of NCs with anisotropic shape. These findings provide a foundation for the rational design of epitaxial structures in a fundamentally and practically important size regime between atomic and microscopic systems.

Date: 2014
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6045

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DOI: 10.1038/ncomms6045

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