Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

Qing Cao (), Shu-jen Han and George S. Tulevski
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Qing Cao: IBM T.J. Watson Research Centre
Shu-jen Han: IBM T.J. Watson Research Centre
George S. Tulevski: IBM T.J. Watson Research Centre

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm−1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of −1 V.

Date: 2014
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DOI: 10.1038/ncomms6071

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