Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

Rui Cheng, Shan Jiang, Yu Chen, Yuan Liu, Nathan Weiss, Hung-Chieh Cheng, Hao Wu, Yu Huang () and Xiangfeng Duan ()
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Rui Cheng: University of California
Shan Jiang: University of California
Yu Chen: University of California
Yuan Liu: University of California
Nathan Weiss: University of California
Hung-Chieh Cheng: University of California
Hao Wu: University of California
Yu Huang: University of California
Xiangfeng Duan: University of California

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. Here we report a systematic investigation of MoS2 transistors with optimized contact and device geometry, to achieve self-aligned devices with performance including an intrinsic gain over 30, an intrinsic cut-off frequency fT up to 42 GHz and a maximum oscillation frequency fMAX up to 50 GHz, exceeding the reported values for MoS2 transistors to date (fT~0.9 GHz, fMAX~1 GHz). Our results show that logic inverters or radio frequency amplifiers can be formed by integrating multiple MoS2 transistors on quartz or flexible substrates with voltage gain in the gigahertz regime. This study demonstrates the potential of two-dimensional layered semiconductors for high-speed flexible electronics.

Date: 2014
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DOI: 10.1038/ncomms6143

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