Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition

Zheng Liu, Matin Amani, Sina Najmaei, Quan Xu, Xiaolong Zou, Wu Zhou, Ting Yu, Caiyu Qiu, A. Glen Birdwell, Frank J. Crowne, Robert Vajtai, Boris I. Yakobson, Zhenhai Xia, Madan Dubey (), Pulickel M. Ajayan () and Jun Lou ()
Additional contact information
Zheng Liu: School of Materials Science and Engineering, Nanyang Technological University
Matin Amani: Sensors and Electron Devices Directorate, US Army Research Laboratory
Sina Najmaei: Rice University
Quan Xu: University of North Texas
Xiaolong Zou: Rice University
Wu Zhou: Oak Ridge National Lab
Ting Yu: School of Physical and Mathematical Sciences, Nanyang Technological University
Caiyu Qiu: School of Physical and Mathematical Sciences, Nanyang Technological University
A. Glen Birdwell: Sensors and Electron Devices Directorate, US Army Research Laboratory
Frank J. Crowne: Sensors and Electron Devices Directorate, US Army Research Laboratory
Robert Vajtai: Rice University
Boris I. Yakobson: Rice University
Zhenhai Xia: University of North Texas
Madan Dubey: Sensors and Electron Devices Directorate, US Army Research Laboratory
Pulickel M. Ajayan: Rice University
Jun Lou: Rice University

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Monolayer molybdenum disulfide (MoS2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS2. Recently, large-size monolayer MoS2 has been produced by chemical vapour deposition, but has not yet been fully explored. Here we systematically characterize chemical vapour deposition-grown MoS2 by photoluminescence spectroscopy and mapping and demonstrate non-uniform strain in single-crystalline monolayer MoS2 and strain-induced bandgap engineering. We also evaluate the effective strain transferred from polymer substrates to MoS2 by three-dimensional finite element analysis. Furthermore, our work demonstrates that photoluminescence mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS2.

Date: 2014
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DOI: 10.1038/ncomms6246

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