Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Zhihao Yu, Yiming Pan, Yuting Shen, Zilu Wang, Zhun-Yong Ong, Tao Xu, Run Xin, Lijia Pan, Baigeng Wang, Litao Sun (), Jinlan Wang, Gang Zhang, Yong Wei Zhang, Yi Shi () and Xinran Wang ()
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Zhihao Yu: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Yiming Pan: School of Physics, Nanjing University
Yuting Shen: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University
Zilu Wang: Southeast University
Zhun-Yong Ong: Institute of High Performance Computing
Tao Xu: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University
Run Xin: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Lijia Pan: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Baigeng Wang: School of Physics, Nanjing University
Litao Sun: SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University
Jinlan Wang: Southeast University
Gang Zhang: Institute of High Performance Computing
Yong Wei Zhang: Institute of High Performance Computing
Yi Shi: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Xinran Wang: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and traps, leading to much lower mobility than the intrinsic limit. Here we develop a facile low-temperature thiol chemistry route to repair the sulfur vacancies and improve the interface, resulting in significant reduction of the charged impurities and traps. High mobility >80 cm2 V−1 s−1 is achieved in backgated monolayer molybdenum disulfide field-effect transistors at room temperature. Furthermore, we develop a theoretical model to quantitatively extract the key microscopic quantities that control the transistor performances, including the density of charged impurities, short-range defects and traps. Our combined experimental and theoretical study provides a clear path towards intrinsic charge transport in two-dimensional dichalcogenides for future high-performance device applications.

Date: 2014
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DOI: 10.1038/ncomms6290

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