EconPapers    
Economics at your fingertips  
 

n-type chalcogenides by ion implantation

Mark A. Hughes (), Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae-Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak (), Stephen R. Elliott () and Richard J. Curry ()
Additional contact information
Mark A. Hughes: Advanced Technology Institute, University of Surrey
Yanina Fedorenko: Advanced Technology Institute, University of Surrey
Behrad Gholipour: Optoelectronics Research Centre, University of Southampton
Jin Yao: Optoelectronics Research Centre, University of Southampton
Tae-Hoon Lee: University of Cambridge
Russell M. Gwilliam: Advanced Technology Institute, University of Surrey
Kevin P. Homewood: Advanced Technology Institute, University of Surrey
Steven Hinder: The Surface Analysis Laboratory, University of Surrey
Daniel W. Hewak: Optoelectronics Research Centre, University of Southampton
Stephen R. Elliott: University of Cambridge
Richard J. Curry: Advanced Technology Institute, University of Surrey

Nature Communications, 2014, vol. 5, issue 1, 1-9

Abstract: Abstract Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb ‘doping’ concentrations (~5–11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.

Date: 2014
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/ncomms6346 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6346

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms6346

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().

 
Page updated 2025-03-19
Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6346