Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

Y. Lei, Y. Li, Y. Z. Chen, Y. W. Xie, Y. S. Chen, S. H. Wang, J. Wang, B. G. Shen, N. Pryds, H. Y. Hwang and J. R. Sun ()
Additional contact information
Y. Lei: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
Y. Li: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
Y. Z. Chen: Technical University of Denmark, Risø Campus
Y. W. Xie: Geballe Laboratory for Advanced Materials and Stanford Institute for Materials & Energy Sciences, Stanford University
Y. S. Chen: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
S. H. Wang: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
J. Wang: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
B. G. Shen: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences
N. Pryds: Technical University of Denmark, Risø Campus
H. Y. Hwang: Geballe Laboratory for Advanced Materials and Stanford Institute for Materials & Energy Sciences, Stanford University
J. R. Sun: Beijing National Laboratory for Condensed Matter & Institute of Physics, Chinese Academy of Sciences

Nature Communications, 2014, vol. 5, issue 1, 1-7

Abstract: Abstract Electrostatic gating field and light illumination are two widely used stimuli for semiconductor devices. Via capacitive effect, a gate field modifies the carrier density of the devices, while illumination generates extra carriers by exciting trapped electrons. Here we report an unusual illumination-enhanced gating effect in a two-dimensional electron gas at the LaAlO3/SrTiO3 interface, which has been the focus of emergent phenomena exploration. We find that light illumination decreases, rather than increases, the carrier density of the gas when the interface is negatively gated through the SrTiO3 layer, and the density drop can be 20 times as large as that caused by the conventional capacitive effect. This effect is further found to stem from an illumination-accelerated interface polarization, an originally extremely slow process. This unusual effect provides a promising controlling of the correlated oxide electronics in which a much larger gating capacity is demanding due to their intrinsic larger carrier density.

Date: 2014
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/ncomms6554 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms6554

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms6554

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().