Carbon nanotube network-silicon oxide non-volatile switches

Albert D. Liao (), Paulo T. Araujo (), Runjie Xu and Mildred S. Dresselhaus
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Albert D. Liao: Research Laboratory of Electronics, MIT
Paulo T. Araujo: Research Laboratory of Electronics, MIT
Runjie Xu: Research Laboratory of Electronics, MIT
Mildred S. Dresselhaus: Research Laboratory of Electronics, MIT

Nature Communications, 2014, vol. 5, issue 1, 1-6

Abstract: Abstract The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

Date: 2014
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DOI: 10.1038/ncomms6673

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