High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots
Jiaxiang Zhang (),
Johannes S. Wildmann,
Fei Ding (),
Rinaldo Trotta (),
Yongheng Huo,
Eugenio Zallo,
Daniel Huber,
Armando Rastelli and
Oliver G. Schmidt
Additional contact information
Jiaxiang Zhang: Institute for Integrative Nanosciences, IFW Dresden
Johannes S. Wildmann: Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz
Fei Ding: Institute for Integrative Nanosciences, IFW Dresden
Rinaldo Trotta: Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz
Yongheng Huo: Institute for Integrative Nanosciences, IFW Dresden
Eugenio Zallo: Institute for Integrative Nanosciences, IFW Dresden
Daniel Huber: Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz
Armando Rastelli: Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz
Oliver G. Schmidt: Institute for Integrative Nanosciences, IFW Dresden
Nature Communications, 2015, vol. 6, issue 1, 1-8
Abstract:
Abstract Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10−2). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.
Date: 2015
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms10067
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DOI: 10.1038/ncomms10067
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